Abstract: In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We show that ...
Abstract: High-voltage switches composed of semiconductor switching components generally require a series stacked configuration, owing to limitations from the device voltage rating. In this ...
Every new smartphone seems a little faster and sleeker than the last, but the tiny switches inside them, called transistors, are hitting a physical wall. Made from silicon, these components have ...
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