Abstract: The efficiency and power density of power conversion systems can be greatly improved by utilizing gallium nitride high-electron-mobility transistors (GaN HEMTs) due to their ultra-low ...
Ideal Power has been granted a patent for a method of operating a bi-directional double-base bipolar junction transistor (B-TRAN) in a power module. The method involves conducting load current, ...
Teledyne e2v HiRel Electronics proudly announces the release of the TDGM650LS60, the first product in its innovative new 650V power module family. This new module utilizes a Teledyne high-voltage ...
Cambridge GaN Devices (CGD) is to lead a €10.3m project to develop intelligent GaN power modules. Called GaNext, and part of the Penta programme, its partners include academic and commercial ...
Abstract: A software module was developed to calculate the main parameters of the SPICE-model of a bipolar transistor based on its static volt-ampere characteristics. This software module is based on ...
AYALA-LED Integrated Micro-Electronics Inc. (IMI) said it will enter the contract manufacturing of power-module business as it inaugurated its Insulated Gate Bipolar Transistor module facility. The ...
Ever-rising demand for electrical vehicles (EVs) is driving fast development of IGBT (insulated gate bipolar transistor) module applications, prompting Chinese semiconductor players such as BYD ...
GeneSiC Semiconductor announces the immediate availability of 20 m -1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging GeneSiC Semiconductor announces the immediate ...
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