Ampleon has unveiled a high-efficiency 750W RF power transistor. The BLF0910H9LS750P has an efficiency of 72.5% at 915MHz and a rugged design that makes it suitable for industrial and professional RF ...

The common-emitter configuration (Figure 1a) is the only one in which the input and output are out of phase. For efficient operation at high frequencies, it is crucial to minimize the series ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

Active inductors have emerged as a transformative component in CMOS radio frequency (RF) circuit design, effectively replacing traditional passive inductors with active semiconductor networks. By ...

Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of its proven 9th generation high voltage LDMOS process technology. The ...

NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H. 1.5kW continuous wave is available at 50V, and the device works over 1.8–500MHz. The transistor is ...

Ampleon’s transistor offers a frequency response of 0 to 650 MHz in an air-cavity ceramic package. Ampleon has released the first of a family of RF power devices based on its Advanced Rugged ...

Wireless base station power amplifier manufacturers, including 2G, 2.5G and 3G OEMs, represent the primary market targeted by a new family of power transistors that is said to deliver about a 10% ...