Electronic Design

Dirt Cheap ASIC Design for Dummies (Part 3): NMOS, PMOS Silicon Design Using a Web Browser

Quickly learn what the difference is between PMOS and NMOS transistors in their structure and operation, and how CMOS works with the two in combination. Siliwiz, a free, browser-based, ASIC layout ...
Electronic Design

Use Hybrid PMOS-NMOS Active Loads To Cut Substrate Noise In Differential Amplifiers

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
Electronics Weekly

X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip process

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
Semiconductor Engineering

Speeding Up NMOS

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
Semiconductor Engineering

Mobility Gets A Boost With Expanded Epi Applications

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
EDN

Intel, TI discuss strained-engineering techniques

Austin, Texas – Intel Corp. and Texas Instruments Inc. process engineers are opening up about how they have strained-literally-to boost the performance of 90-nanometer silicon at only a marginal ...
EDN

Models for high-voltage transistors in a standard CMOS process

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...
Electronics Weekly

Updated: X-FAB adds to low-noise transistor portfolio

X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...
Nature

P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors

The Nature Index 2024 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...