This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

Diodes Incorporated has announced its first Schottky diode to be offered in the miniature leadless DFN0603 package. Diodes Incorporated has announced its first Schottky diode to be offered in the ...

After lying dormant in research laboratories for decades, silicon carbide (SiC) is beginning to realize its potential as a substrate material. [Transistor After lying dormant in research laboratories ...

A diode design can make terahertz signals stronger & work better, helping build smaller devices for imaging, sensing, and wireless communication.

Malvern, Pa. — Vishay Intertechnology, Inc. has released a single-chip power MOSFET and Schottky diode device that is said to improve operational efficiency by up to 6% in DC/DC conversion ...

Electromagnetic waves with frequencies between microwave and infrared light, also known as terahertz radiation, are leveraged ...

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...